陷阱电荷

1
Trapped charge
进行门泄漏测试可以确定器件对陷阱电荷(trapped charge)机制的易感性。这样的泄漏主要是被塑模成型材料和后模加工处理热曲线的变化挤压引起的。
2
trapping charge
欢迎访问《半导体学报》网站！关键词: 最大衬底电流应力关态带带遂穿 陷阱电荷 GIDL[gap=712]Keywords: I sub max stress;off-state;band-band tunneling;trapping charge;GIDL

短语

1
给出了陷阱电荷密度的解析表达式和相关参数的提取方法和结果。
The analytical expression of the density of trapping charges is proposed. The method and the results of parameters extraction are also presented.
2
通过对载流子扩散机理的研究，由数学公式的推导，得到陷阱电荷分布随电场变化的函数关系。
Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states.
3
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.

点击反馈