This paper is going to analyze a control circuit to stabilize dynamically the electrical level in JFET back grid.
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在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
Firstly, an analysis of the structure of various SOI MOSFET and their characteristics under conditions of different front and back gate-voltage are made.
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