The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
2
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
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