The invention further relates to method of protecting data in a non-volatile memory device.
本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
Apparatus and methods store data in a non-volatile solid state memory device (100) according to a rate-compatible code, such as a rate-compatible convolutional code (RPCC).
本发明揭示根据例如速率兼容卷积码(RPCC)等速率兼容码将数据存储于非易失性固态存储器装置(100)中的设备及方法。
The invention further provides a device for obtaining the address distribution information of failure bits in non-volatile memory.
本发明还提供了一种获取非挥发存储器中失效二进制位地址分布信息的装置。
The present application discloses a single cell non-volatile semiconductor memory device for storing two-bits of information.
本申请公开了一种单元非易失性半导体存储器件，用于存储两位信息。
The device is manufactured using Atmel's high density non-volatile memory technology.
本芯片是以Atmel高密度非易失性存储器技术生产的。
The device is manufactured using Atmel's high density non-volatile memory technology.
本芯片是以Atmel高密度非易失性存储器技术生产的。
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