For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
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