The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
A developed IG technique was suggested and the mechanism of the influence of As on oxygen precipitation formation in heavily As-doped silicon was discussed.
探索出一种改进的内吸除技术，并探讨了其增强重掺硅片中氧沉淀的机理。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
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