The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。
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