Abbreviation of Thin Film Transistor.
薄膜晶体三极管的缩写。
薄膜晶体管TFT ？
Thin Film Transistor - Liquid Crystal Display?
薄膜晶体管液晶显示器TFT- LCD ？
Array of thin film transistor is arranged on the transistor plate.
晶体管板具有数组排列的薄膜晶体管。
Provided are a thin film transistor and a method of manufacturing the same.
本发明提供一种薄膜晶体管及其制造方法。
Thin film transistor array substrate and its producing method are disclosed.
薄膜晶体管阵列基板及其制造方法。
The a-Si thin film transistor (TFT) used as room temperature infrared detector is studied.
研究了用于室温红外探测的非晶硅薄膜晶体管。
In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material.
在一个实施方案中，薄膜晶体管包含有机半导体材料层。
Summarizing the basic structure and fundamental of the thin film transistor liquid crystal display.
概述了薄膜晶体管液晶显示器基本结构与原理。
The invention discloses a thin film transistor and a method for manufacturing the thin film transistor.
本发明提供了薄膜晶体管和用于制造薄膜晶体管的方法。
The invention provides a thin film transistor array substrate, a display and a manufacturing method thereof.
本发明提供一种薄膜晶体管阵列基板、显示器及其制造方法。
The glass sheets may have thin film transistor elements formed thereon for use in forming pixels on the display.
该玻璃板可以使薄膜晶体管形成于其上，以便在该显示器上形成像素。
An organic thin film transistor, a method of manufacturing the same, and a display device using the same are provided.
本发明提供一种有机薄膜晶体管及其制造方法，和使用其的显示设备。
Method for forming pattern, thin film transistor, display device and method for manufacturing the same and application.
形成图案的方法，薄膜晶体管，显示设备及制法和应用。
Pattern formation method, thin film transistor, display device and manufacturing method of these device, and television set.
形成图案的方法，薄膜晶体管，显示设备及其制造方法，以及电视设备。
This paper aims at the research on drive technology of LTPS (Low Temperature Poly-Silicon) TFT (Thin Film Transistor) AM-OLEDs.
本文对低温多晶硅薄膜晶体管（TFT）AM-OLED的驱动技术进行了研究。
These features make the EL5221 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD).
上述特点使得作为在薄膜晶体管液晶显示器(TFT - LCD)的参考电压缓冲器的使用EL5221的理想选择。
The defect classification and the reason forming defect of VGA thin film transistor active matrix liquid crystal displays are analysed.
分析了VGA有源矩阵液晶显示器的缺陷分类、产生原因。
The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer.
本发明提供了一种其中铝原子不可能扩散到氧化物半导体层的薄膜晶体管。
Being formed on the transistor plate, multiple conduction region blocks are electrically connected to each thin film transistor respectively.
多个导电区块形成于晶体管板上，且分别与每一薄膜晶体管电性连接。
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided.
提供了一种包括薄膜晶体管的半导体器件，该薄膜晶体管具有氧化物半导体层和优秀的电特性。
A transistor circuit for an array device comprises a plurality of thin film transistors electrically connected in parallel and provided on a common substrate.
一种用于阵列器件的晶体管电路包括并联电连接且设置在同一衬底上的多个薄膜晶体管。
In this paper, we reviewed several hotspots of LCD research, including Transparent LCD (TS-LCD), poly-silicon thin film transistor, liquid crystal on silicon (Lcos).
本文回顾了现阶段液晶显示器的几个研究热点，包括透反射液晶显示器、多晶硅薄膜晶体管技术及硅基液晶。
When these switch components are composed of a thin film transistor, the testing device at least includes a switch wiring coupled to the gates of the thin film transistor.
当开关组件是由薄膜晶体管所构成时，测试装置更包括至少一开关配线，电性耦接至薄膜晶体管的闸极。
In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
Patterned crystallization of amorphous silicon (a-Si) on substrates of glass is very important for the fabrication of thin film transistor used in active matrix liquid crystal displays.
以玻璃为基底的非晶硅图形式结晶，对于研制用于矩阵液晶显示的薄膜半导体具有重要意义。
The thin film transistor of the invention has the advantages of small photosensitive degeneration, high migration rate, fast response speed, flexibility and good stability of performance.
本发明的薄膜晶体管具有光敏退化性小、迁移率高，响应速度快、柔性可弯曲、性能稳定性好的优点。
According to the present invention, formation of lattice defect in an oxide semiconductor layer and entering of moisture can be prevented, improving reliability of the thin film transistor.
本发明能够抑制氧化物半导体层中晶格缺陷的形成并抑制湿气的进入，从而提高薄膜晶体管的可靠性。
Hydrogenated silicon film attracts extensively attention due to its application on many kinds of microelectronic devices, such as infrared imaging system, solar cell and thin film transistor.
氢化硅薄膜由于在红外成像传感器、太阳能电池及薄膜晶体管等微电子器件中有着广泛应用前景而备受关注。
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