... Level Cell，通过控制内部的电荷的多少，就是控制External Gate去充电，与此相对应的是易失性存储设备(Volatile Memory Device)，称作 2的4次方＝16 Level Cell，称作2的2次方＝4 Level Cell，Multi Level Cell.
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The invention further relates to method of protecting data in a non-volatile memory device.
本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
Main memory is a volatile storage device. It loses its contents in the case of system failure.
主存储器是一个易失性存储设备。系统失败时，会丢失其内容。
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