impurity in semiconductor material 半导体材料中的杂质
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width…
杂质层的引入增宽了原来光子禁带的宽度，杂质态的特征与杂质层的光学厚度、 折射率及在晶体中的位置等因素有关。
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