The fundamental principles of the bulk-driven MOSFET, along with the frequency and noise characteristics, are discussed. The analysis and simulation of its low voltage characteristics are also made.
讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真。
A fundamental assumption for the analysis is that the frequency of occurrence of the trend adopted is much higher in the transport direction, than in any other directions.
粒径趋势分析的基本假设是，沿着净输运方向，某种粒径趋势出现的概率远高于其在别的方向上出现的概率。
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