The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.

研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。

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The dynamic recrystallization mechanism during hot compress was examined by the true stress-strain curves and TEM.

采用真应力一真应变曲线和TEM研究其高温压缩变形中的流变应力行为和它的动态再结晶过程。

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