The dynamic recrystallization mechanism during hot compress was examined by the true stress-strain curves and TEM.

采用真应力一真应变曲线和TEM研究其高温压缩变形中的流变应力行为和它的动态再结晶过程。

www.magsci.org

The hot carrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.

研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。

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