The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
If we select substrate temperature, laser power and the scan speed properly, we can get good crystallization. It is useful to the fabrication of SOI devices.
适当选择衬底温度、激光功率和扫描速度可望获得良好的结晶，它对SO I器件的制作是有意义的。
The semiconductor substrate may be an SOI (silicon on insulator) structure.
所述半导体衬底可以是SOI（绝缘体上硅）结构。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
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