Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.

对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。

youdao

Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.

对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。

youdao