In this paper, a new theoretical analysis method for diffusion of interstitial atom in crystal materials has been presented.
本文提出间隙原子在晶体材料中扩散的微观过程的新的理论分析方法。
The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron.
结果表明，引起注入硼异常扩散的是点缺陷，而不是硼间隙原子的快扩散。
The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron.
结果表明，引起注入硼异常扩散的是点缺陷，而不是硼间隙原子的快扩散。
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