• The bigger the atomic number, the deeper the impurity level is.

    原子序数越大,杂质能级深。

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  • It is believed that the emission peaks were concerned with impurity level in the bandgap.

    变温实验说明相应发射材料禁带中形成的杂质能级有关

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  • Varying impurity level, it was found that this microstructural effect is independent of temper embrittlement.

    改变杂质水平看出显微组织影响回火脆性无关。

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  • This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width

    杂质引入原来光子禁带宽度,杂质的特征与杂质的光学厚度、 折射率及晶体中的位置等因素有关。

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  • These data can be used to estimate the lifetime of plasma facing components and analyze the impurity level in core plasma of fusion reactors.

    这些数据估计等离子部件寿命堆芯等离子体中的杂质水平是有意义的。

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  • These data might be useful to estimate the lifetime of plasma facing components and to analyze the impurity level in core plasma of fusion reactors.

    这些结果估计面对等离子部件寿命分析聚变堆等离子体中的杂质水平估计很有用的。

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  • If analytical equipment is available, purge system until oxygen content of residual gas is either less than or meets the process specification impurity level.

    如果分析仪器的话一直净化设备,直到残留气体含量或者低于或者满足工艺规范纯度级别

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  • An identification technique was presented for estimating the impurity level in propellant and the properties of exhaust afterburning, which can not be measured simply by experiment.

    提出参数辨识确定推进剂钾、钠杂质含量以及后燃微波衰减影响程度的方法。

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  • It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap.

    证明在磁性杂质附近,可能形成一个束缚元激发能量位于能隙之中

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  • But too high thickness and doping level will do harm to the smoothness of film surface with doped impurity deteriorating the crystallization.

    但是薄膜厚度增大掺杂浓度的提高会恶化面的平整度,同时过量掺杂也影响薄膜的结晶性能。

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  • It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.

    通过对电子结构分析发现杂质能级深浅掺杂元素原子序数有关

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  • It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.

    通过对电子结构分析发现杂质能级深浅掺杂元素原子序数有关

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