The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
This allows the gate to regain control in order to turn the device on at some controllable time after it has again entered the forward blocking state.
这样，当晶闸管重新处于正向阻断状态(器件处于可控时间)，使得门极变得可控。
Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
Insulated Gate Bipolar Transistor (IGBT) as controllable switch, has been applied widely.
绝缘栅双极二级管(IGBT)作为一种可控开关，获得了广泛应用。
应用推荐